Total Dose Effects on RHbip1 technology
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چکیده
This Chapter deals with two tests we performed on our wafers in order to evaluate the total dose response of RHbip1 technology. The practical aim was to establish the reliability of the voltage regulator in an LHC-like radiation environment. Moreover irradiation data for test structures were also taken and analyzed, in order to get more into the damage physics. We made tests with neutrons and protons. In the following we will describe the experiments and the results related to discrete transistors.
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